n-channel UM5K1N ! features 1) two 2sk3018 transistors in a single umt package. 2) mounting cost and area can be cut in half. 3) low on-resistance. 4) low voltage drive (2.5v) makes this device ideal for portable equipment. 5) easily designed drive circuits. ! ! ! ! applications interfacing, switching (30v, 100ma) ! ! ! ! structure mosfet ! ! ! ! external dimensions (units : mm) rohm : umt5 eiaj : sc-88a abbreviated symbol : k1 0.9 0.15 0to0.1 0.1min. 0.7 2.1 1.3 0.65 2.0 ( 4 ) ( 1 ) ( 6 ) 0.2 1.25 ( 2 ) 0.65 ( 3 ) each lead has same dimensions ! ! ! ! equivalent circuit (1) ? gate protection diode ? gate protection diode tr1 tr2 ? a protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when rated voltagesare exceeded. (1) tr1 gate (2) source (3) tr2 gate (4) tr2 drain (6) tr1 drain (2) (3) (4) (6) ! ! ! ! packaging specifications tr 3000 UM5K1N type package code basic ordering unit (pieces) taping product specification ty 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
! ! ! ! absolute maximum ratings (ta=25 c) parameter drain-source voltage gate-source voltage drain current total power dissipation (tc=25?c) channel temperature storage temperature v v ma ma mw ?c ma continuous pulsed continuous pulsed ma ?c v dss v gss i dr p d ? 2 tch i d i drp ? 1 i dp ? 1 tstg symbol 30 ?0 100 200 100 200 150 150 ? 55 + 150 limits unit ? 1 pw 10 s, duty cycle 50% ? 2 with each pin mounted on the recommended lands. reverse drain current ! ! ! ! electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) r ds(on) c iss y fs c oss c rss min. ? 30 ? 0.8 ? ? 20 ? ? ? ? ? ? 5 13 ? 9 4 1 ? 1.0 1.5 8 ? 713 ? ? ? ? av gs = 20v, v ds = 0v i d = 10 a, v gs = 0v v ds = 30v, v gs = 0v v ds = 3v, i d = 100 a i d = 10ma, v gs = 4v i d = 1ma, v gs = 2.5v v ds = 5v i d = 10ma, v ds = 3v v gs = 0v f = 1mhz v a v ? ? pf ms pf pf t d(on) ? 15 ? i d = 10ma, v dd 5v ns t r ? 35 ? v gs = 5v ns t d(off) ? 80 ? r l = 500 ? ns t r ? 80 ? r gs = 10 ? ns typ. max. unit test conditions gate-source leakage drain-source breakdown voltage zero gate voltage drain curren t gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time static drain-source on-stage resistance UM5K1N product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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